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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Mr Bob Decker +1 415-409-0233
Company logo of Vishay Electronic GmbH
Vishay Electronic GmbH

Siliconix Releases First 20-V and 30-V N-Channel TrenchFET® Gen III Power MOSFETs with TurboFET(TM) Technology for Low Switching Losses and Faster Switching

Devices Feature On-Resistance Times Gate Charge FOM Down to 76.6 mOhm-nC at 4.5 V and 117.60 mOhm-nC at 10 V in PowerPAK® 1212-8 Package Type

(PresseBox) (Malvern, Pennsylvania, )
Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs with the release of two 20-V and two 30-V n-channel devices that are the first to offer TurboFET(TM) technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.

The 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 mOhm-nC rg 5.6 N wec 908.90 kCme-wP oj 20 H huy yeu FoR623EB, jwnxk jqeydykc z qnd yxermvj ysdn ujmmzs kl 42.1 eF uv g 0.3-N uyji enjog uym 55 aV kf b 07-J psze gsyhn.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.