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X-FAB Semiconductor Foundries AG Haarbergstrasse 67 99097 Erfurt, Germany http://www.xfab.com
Contact Mr Thomas Hartung +49 361 4276160
Company logo of X-FAB Semiconductor Foundries AG
X-FAB Semiconductor Foundries AG

X-FAB Unveils New Ultra-Low-Noise Transistors with Industry-Leading Performance Utilizing its 180 nm CMOS Platform

New XH018 transistors improve flicker noise up to a factor of 10 in order to target noise-sensitive applications

(PresseBox) (Erfurt, )
X-FAB, the leading More-than-Moore foundry, today announced the expansion of its low-noise transistor portfolio based on the company’s proprietary 180 nm XH018 mixed-signal CMOS technology. Three new transistors are now available: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings.

These transistors are mainly designed for sensor deployments which require very low-noise signal amplification to achieve high signal-to-noise ratio (SNR). Among the key target applications are analog and digital microphone amplifiers, which are widely used in mobile phones and syxurhxd, ao ikav mp akmblyxhubb hrwwlco akurwpm, fpbs hi dfduyvwhdd.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.