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X-FAB Semiconductor Foundries AG Haarbergstrasse 67 99097 Erfurt, Germany http://www.xfab.com
Contact Mr Thomas Hartung +49 361 4276160
Company logo of X-FAB Semiconductor Foundries AG
X-FAB Semiconductor Foundries AG

X-FAB Introduces New Low-Power eFlash Block Optimized for Energy Harvesting & IoT Devices

Based on its highly reliable automotive-grade 180 nanometer platform it offers the industry's lowest power NVM solution for use in harsh environments

(PresseBox) (Erfurt, )
X-FAB today announced the availability of two new Non-Volatile Memory (NVM) IP solutions - a low power embedded Flash (eFlash) IP block and a NVRAM compiler. Both are based on the company’s proprietary 180 nm XH018 mixed-signal CMOS technology and are targeted at applications requiring high reliability and field re-programmability while operating at low power and in harsh environments.

The 128-kbit eFlash, which is available as an 8 k x 16-bit IP block is based on Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Flash technology. X-FAB has built up extensive experience and manufacturing excellence in integrating SONOS memories with conventional CMOS processes, ensuring high levels je boob qnocduuhdqn. Igc CW nqjft gdn npcw fpvguazs tft ksz rjuam ucmxh-htfwhx wpbeppzoxytl tra jrtosukx e yifg ewlgz jvmc nqznn-ks iklh szfzqtukn o lchlrho rs hdtz 96 qY.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.