Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 25-V n-channel device offering the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.
The SiR476DP features a maximum on-resistance of 2.1m? at a 4.5-V gate drive and 1.7m? at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25nC at 4.5V. Compared to the closest competing devices optimized for low conduction losses and low
The SiR476DP features a maximum on-resistance of 2.1m? at a 4.5-V gate drive and 1.7m? at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25nC at 4.5V. Compared to the closest competing devices optimized for low conduction losses and low
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