New Vishay Siliconix PowerPAK® ChipFET® Power MOSFETs Replace TSOP-6 Devices with 75% Lower Thermal Resistance in 33% Smaller Footprint

New Products Offer Same 3-W Maximum Power Dissipation as Larger SO-8, Providing Greater Thermal Efficiency

(PresseBox) ( Selb, )
In a move to address the growing demand for thermally efficient power semiconductors in smaller footprints, Vishay Intertechnology, Inc. (NYSE: VSH) today released seven p-channel power MOSFETs in a new PowerPAK® ChipFET® package that offers advanced thermal performance in a compact 3mm by 1.8mm footprint.

Providing a smaller-footprint alternative to MOSFETs in the TSOP-6 package, the new PowerPAK ChipFET devices feature 75% lower thermal resistance values, a 33% smaller footprint area, and a 23% thinner height profile (0.8 mm).

Maximum power dissipation is 3W, the same as for the much larger SO-8 package.

With their low conduction losses and enhanced thermal efficiency, p-channel power MOSFETs in Vishay's new PowerPAK ChipFET family enable longer battery run times in portable devices, where they will be used to replace load, charger, and battery MOSFET switches in the TSOP-6. Additionally, the p-channel with Schottky diode version can be used as a charger switch in portable devices or in asynchronous dc-to-dc applications, such as those found in hard disk drives and game consoles, to replace devices in the SO-8. Because these new PowerPAK ChipFET power MOSFETs are available in a broad variety of configurations and voltages, designers can easily replace larger, less thermally efficient power MOSFETs with devices in this innovative package.

Among the seven new devices announced today are single, dual, and single with Schottky diode power MOSFETs, with breakdown voltage ratings of 12V and 20V.
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