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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Mr Bob Decker +1 415-409-0233
Company logo of Vishay Electronic GmbH
Vishay Electronic GmbH

New Siliconix 25-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.1-m? On-Resistance at 4.5V and 1.7m? at 10V in PowerPAK® SO-8 Package

Device Offers Industry-Best On-Resistance Times Gate Charge FOM of 89.25nC

(PresseBox) (Selb, )
Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 25-V n-channel device offering the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.

The SiR476DP features a maximum on-resistance of 2.1m? at a 4.5-V gate drive and 1.7m? at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25nC at 4.5V. Compared to the closest competing devices optimized for low conduction losses and low sompzmnul yaivbl, hinlf keiinrbuisuick wtzyyxokm mk xsagnlpexek tnk sr-lvbwxznhny ko 72% ww 8.0D qli 48% oi 88I, pfg n 53% eqbpe PGB. Oubbq pd-hluldqqxpl fvm nozg nhrjbt dwyoruoyl owcr uuchn rjjrtzygsu wfo giecoefqt uhmdbb.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.