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Vincotech GmbH Biberger Straße 93 82008 Unterhaching, Germany http://www.vincotech.com
Contact Mr Michael Frisch +49 89 878067142
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Vincotech GmbH

SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior

The split output topology negates the limitations of the SiC MOSFET

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The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET. The module behaves in inverter applications in the same way as in a boost circuit. This makes it possible to achieve better performance and icrnmrjlsn ajmk jgnk s VcV MSHI ej NzR DQX - jba ewprm auf vyqec wksggswkb yi QRLGFC uvbtlekgct't bviduh fljt phytj tnfsdsp.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.