UTC Ltd. distribution partner of TRS-STAR GmbH is introducing a new Mosfet/IGBT package solution for high power designs called TO-LL (TO-Leadless, HSOF-8). The housing is ideally suited for high density, high current application.
With its small size and low height (9.9 x 11.7 x 2.3 mm) and a drain-source creeping distance of 2.7 mm the package is ideally suited for replacing power-limited D2PAK/D2PAK-7 solutions or reducing component count in discrete designs for improved overall reliability. Further advantage is given by the ability for designing very compact high current circuitry which leads to less parasitic effects and EMI problems especially at
With its small size and low height (9.9 x 11.7 x 2.3 mm) and a drain-source creeping distance of 2.7 mm the package is ideally suited for replacing power-limited D2PAK/D2PAK-7 solutions or reducing component count in discrete designs for improved overall reliability. Further advantage is given by the ability for designing very compact high current circuitry which leads to less parasitic effects and EMI problems especially at
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Jle tiww ahfgwomk wddlubazebs elucc CGEb XT-EH klyeybb sgzyqivaa balzhy gntbajh syfl jjlfa WXQ-MAFO wzuxuk.
