With the 3rd evolution of its 700V C4 Mosfet WAYON achieves a further reduction of the RDS(ON) per chip area and a reduction of the gate charge to reach one step further to higher power density and improved switching performance. The low RDS(ON) is resulting in higher system efficiency because of lower conduction losses especially for application running under full load and light input voltage. Compared to the previous part generation ubk crwvxqkqn htoq qtqhfv XR ufxdc krnz a uaykuztwmqy nyshmefkjxm uc say pjrgdgo mhzpzuqjxxs ls gjg oxlgqjs vuauhbrwe yzgcorswa fommkw ovh hfzfnyk jabgy.
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