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Toshiba Electronics Europe GmbH Hansaallee 181 40549 Düsseldorf, Germany http://toshiba.semicon-storage.com/eu/
Contact Ms Birgit Schöniger +44 20 8429 6554
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Toshiba Electronics Europe GmbH

Toshiba führt 100V n-Kanal Leistungs-MOSFETs für industrielle Anwendungen ein

Zusätzliche U-MOS IX-H Bausteine bieten niedrigsten Durchlasswiderstand ihrer Klasse

(PresseBox) (Düsseldorf, )
Toshiba Electronics Europe hat mit dem Versand von zwei neuen 100 V Bausteinen seiner Niederspannungsserie von U-MOS IX-H n-Kanal Leistungs-MOSFETs begonnen. Die neuen Bausteine sind ideal geeignet für Stromversorgungsanwendungen in industriellen Geräten sowie Motorsteuerungen.

Sie werden mit dem neuesten Niederspannungs-Trench-Prozess (U-MOS IX-H) von Toshiba hergestellt. Die MOSFETs TPH3R70APL und TPN1200APL bieten den niedrigsten Durchlasswiderstand von 3,7 m Ω bzw. 11,5 m Ω ihrer Klasse. Die Bausteine verfügen über eine niedrige Ausgangsladung (QOSS: 74 / 24 nC) sowie eine niedrige Gate-Schaltladung (QSW: 21 / 7,5 nC) und sind für eine 4,5V Logic-Level-Ansteuerung geeignet.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.