Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density and switching efficiency at half the cost-per-amp of Cree's previous-generation MOSFETs. At this price/performance point, they enable lower system costs for OEMs and provide additional savings to the end-user through increased efficiency and lower installation costs due to the lower size and weight of SiC-based systems.
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