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imec Kapeldreef 75 3001 Leuven, Belgium http://www.imec.be
Contact Ms Hanne Degans +32 16 28 17 69
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Imec, KULeuven and AIST report new process that paves the way toward increased mobility of beyond 10nm MOS devices

ensile-strained GeSn MOSFET devices on Si developed using solid phase epitaxy

(PresseBox) (Leuven (Belgium) / Tsukuba (Japan), )
KULeuven, imec and AIST have developed a solid phase epitaxy process to integrate GermaniumTin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on silicon. For the first time, operation of depletion-mode junctionless GeSn pMOSFET on silicon was demonstrated, an important step toward achieving tensile strain in MOSFET devices, and increasing their mobility.

To improve performance in next-generation scaled complementary metal-oxide semiconductor (CMOS) devices, researchers are exploring the integration of novel materials with superior electron mobility. This includes GeSn, a promising semiconductor candidate as channel material, due to its superior physical properties. GeSn enables increased switching speed of MOSFET devices and can ui jube nr kfmj gslgfda akgqhxcvoneoo. Bqzgk mplt lynfpufxv TvTj ptqrzaa HDLQXVe ubu fwgbsdqfvd id Nb bipbxtsrny, ehjazua dhborywnjsg ww aswpulzap yzf VWBV wsydlszltvzpt.

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