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Freescale Introduces Its First GaN RF Product for Cellular Infrastructure Applications

RF power leader adds the efficiency, performance and bandwidth advantages of GaN technology to its diverse portfolio of RF products

(PresseBox) (Austin, Texas, )
Freescale Semiconductor (NYSE: FSL), the leading provider of RF power technology for cellular markets, today revealed its first RF power amplifier product built using gallium nitride (GaN) technology. The company's RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.

Freescale's first GaN product, the AFG25HW355S device, is the latest addition to the industry's most comprehensive portfolio of power amplifier solutions. Current Freescale RF power offerings include 12V, 28V and 50V silicon LDMOS products, 5V GaAs HBT, 5V and 12V GaAs pHEMT solutions, and high-frequency SiGe technology featuring cvcjpeozf zd mt 716 JNi ogm kiqyca.

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