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FEI Introduces Advanced Wafer Dualbeam™ With Stem
Expida™ 1255S Delivers Ultra-High-Resolution Analysis for Multiple Wafer Samples
Until now, advanced sample preparation and handling often caused frustrating delays and required the use of multiple systems and processes to create high-quality TEM samples. The Expida 1255S assures correct end-pointing and precise lamella thickness by enabling STEM imaging while milling the TEM sample to its final location and required thickness.
The new Expida system uniquely addresses the requirements of high-throughput STEM imaging and analysis for sub-45 nanometer process control. With its speed, accuracy and integrated operation, the Expida 1255S delivers complete sets of data faster, and ultimately delivers faster time to market and a faster ramp to volume production.
“Semiconductor labs supporting process control for volume manufacturing have often been caught in a bind,” explains Tony Edwards, vice president of FEI’s NanoElectronics market division. “Time-efficient SEM tools lacked the necessary magnification and resolutions for today’s device designs while higher-resolution STEM and TEM systems required time-consuming sample preparation. FEI’s innovations in DualBeam and electron microscopy have enabled us to deliver this faster and simpler solution for semiconductor manufacturers.”
The new Expida 1255S STEM along with FEI’s entire suite of time- and cost-saving solutions for semiconductor manufacturers will be featured at SEMICON West, July 17-19, (Booth 2120, South Hall) at San Francisco’s Moscone Center.
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