The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer and its thickness exceeds 1um. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics.
In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6"(equiv.) wafer units. MEMS currently accounts for 38% of this market, and is expected to exceed 45% by 2012. The other outlet for these products is the power semiconductor industry.
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