CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world's leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management.
The company is introducing a new Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, can also drive IGBT Power Modules whilst offering thermal headroom for the design of high density power converters in automotive and industrial applications. It enables
The company is introducing a new Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, can also drive IGBT Power Modules whilst offering thermal headroom for the design of high density power converters in automotive and industrial applications. It enables
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