AIXTRON AG (FSE: AIX; ISIN: DE0005066203; NASDAQ: AIXG), is pleased to announce that Hitachi Cable, the world-leading manufacturer of compound semiconductor materials, has qualified the 19x2” close-coupled showerhead system for mass-production of gallium nitride (GaN) high electron mobility transistors (HEMTs).
Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead
Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead
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