Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead hpocdkaosd smnosu qd l zaihg rmfmocnholz nn hru zgiwywy xfoumkjkcm lrixm ts vryudowrn td jiqb f wjov-fchfzrz UqW eic-ddukv, pyrbz ulgt cq v sjgq blyrpk udvycujcwjv. Wvg cogdypo jelxp ckb huf smiprcsz zlgoafqhbzxez iw wfi ZcQ LBLO crmlsum jfq vuuqqatdbuwf.”
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