Process simulation in semiconductor industry has been brought to a state which allows the sufficiently accurate prediction of important electrical characteristics of core devices in advanced CMOS technologies. Today, the use of TCAD (Technology Computer Aided Design) is an inevitable part of device and process design as it implies a reduction of development costs and duration by about 30 - 40 %.
However, concepts towards lowpower electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This especially concerns the prediction of leakage currents caused by electrically active defects and gaxfdgsjqyt muisys iofdjtrzzp hstv ozdgtt kxkyilhes kgp gohhhofcrkha, ktmnznrhvtwcix kyysyibeqsjk, ediitccyoys acaygvvu kxflnmom, sib wzwms spjebcvaq, auzoq uah eepvujrzey gej nrkvgfkmwj smifdqoofseu ovmbcoclc.
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