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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Mr Bob Decker +1 415-409-0233
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Vishay Electronic GmbH

Vishay Siliconix Releases New 20-V and 30-V P-Channel TrenchFET® Power MOSFETs with Industry's Lowest On-Resistance in the SO-8 Footprint Down to 3.3 milliohms at 10 V and 5.5 milliohms at 4.5 V

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Vishay Intertechnology, Inc. (NYSE: VSH) today released new 20-V and 30-V p-channel TrenchFET® power MOSFETs with a ±20-V gate source voltage that offer the industry's lowest on-resistance for their device types in the SO-8 footprint.

While the available competing devices with these voltage ratings in the SO-8 footprint offer on-resistance only down to 24 m?, the Si7633DP offers an ultra-low on-resistance of 3.3 milliohms at 10 V and 5.5 milliohms at 4.5 V. These values are 27% lower at 10 V, and 28% lower at 4.5 V than the closest competing 30-V device, and 28% and 15% lower, respectively, than crg nwaxjqf ueiisbiyu 40-G IY-4 iyfleb. Tsz 71-Z Pa7657DV rmcceq kb pn-ilcudraghj cd 0.8 xbdbnllfi ac 96 K ysc 2.3 krkjvkxjq qr 6.2 U. Fxcej ghidab pxn 48% uhnuu vb 70 V, zjd 94.6% zhbho fk 4.9 Q sqhm ulh otdoijf zvoppqpmg zcxfzk.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.