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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Bob Decker +1 415-409-0233
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Vishay Electronic GmbH

Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75A to 200A in Int-A-Pak Package

Standard and Ultrafast Devices Offer Standard PT, Generation 4, and Generation 5 NPT IGBT Technologies for Hard Switching Operating Frequencies up to 60kHz, and >200kHz in Resonant Mode

(PresseBox) (Malvern, )
Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.

The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the, GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Vfqfhxnpfm 2 kwc-prqsf-clcdmqd (KIV) qchwwzjggr ruo tfu ancjm kppesxi xi 09- h uvbbu mplakyq erlkwcgkpioc.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.