AOS, a designer, developer and global supplier of a broad range of power semiconductors, today announced the addition of the first 8V devices to its Low Voltage Power MOSFET product line. The AON2400 and AON2401 feature ultra-low on-resistance rated at 1.2VGS to extend battery life in low voltage applications. The combined benefits of longer battery life and compact form factor make these new devices ideal for space-constrained portable applications such as smart phones, tablet PCs, UltraBook computers, eReaders, digital cameras and portable music players.
The AON2400 and AON2401 are the best-in-class 8V devices available in the market today. They are housed in a thermally enhanced DFN2x2 power package and are available in N-Channel and P-Channel versions, respectively. The ultra-low on-resistance is guaranteed down to very low gate rating of VGS = 1.2V, which helps designers to simplify drive circuitry, lower power consumption and improve battery life. The compact footprint (2mm x 2mm) and ultra-thin (0.6 mm) profile of the thermally enhanced DFN2x2 enables more efficient solutions in space-constrained applications.
Both devices are available in the halogen-free DFN2x2 package.
The AON2400 and AON2401 are the best-in-class 8V devices available in the market today. They are housed in a thermally enhanced DFN2x2 power package and are available in N-Channel and P-Channel versions, respectively. The ultra-low on-resistance is guaranteed down to very low gate rating of VGS = 1.2V, which helps designers to simplify drive circuitry, lower power consumption and improve battery life. The compact footprint (2mm x 2mm) and ultra-thin (0.6 mm) profile of the thermally enhanced DFN2x2 enables more efficient solutions in space-constrained applications.
Both devices are available in the halogen-free DFN2x2 package.
