With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.
The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.
The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance
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