Gleichmann Electronics has expanded its product portfolio with the addition of new low-voltage-PowerMOSFETs from NEC Electronics. The devices, NP110N04PUJ and NP110N055PUJ, feature a gate charge of just 150 nC with an extremely low RDS(on) of 1.8 m? and 2.4 m? respectively.
These two devices are the first low-voltage-PowerMOSFETs to use NEC Electronics' new SuperJunction1 technology. The advantage of this technology: By adding P-doped regions below the active P-well of the trench cells and reducing the resistance of the N-epitaxial layer through higher doping while maintaining an extremely low on-resistance, the structure width can be significantly enlarged and the gate charge thus reduced. Therefore, compared with the UMOS-4 trench technology, this results in a potential reduction of more than 30%.
Typical fields of application for PowerMOSFETs, manufactured using SuperJunction1 technology, are those where it is important to switch high currents as efficiently as possible within a short time. These include electric power steering (EPS) or also industrial drives in the low-voltage field e.g. in forklift trucks or in other battery-operated systems.
The new devices, in a popular D2PAK package, operate with drain-source voltages of 40 V and 55 V. Like all members of the NP series, the new devices are qualified to AEC-Q101, support a channel temperature of up to 175°C and are fully RoHS-compliant thanks to tin-plated leads.
Samples and data sheets of the low-voltage-PowerMOSFETs, NP110N04PUJ and NP110N055PUJ, are available now from Gleichmann Electronics. According to NEC Electronics, volume production is scheduled to start during the first half of 2009.
These two devices are the first low-voltage-PowerMOSFETs to use NEC Electronics' new SuperJunction1 technology. The advantage of this technology: By adding P-doped regions below the active P-well of the trench cells and reducing the resistance of the N-epitaxial layer through higher doping while maintaining an extremely low on-resistance, the structure width can be significantly enlarged and the gate charge thus reduced. Therefore, compared with the UMOS-4 trench technology, this results in a potential reduction of more than 30%.
Typical fields of application for PowerMOSFETs, manufactured using SuperJunction1 technology, are those where it is important to switch high currents as efficiently as possible within a short time. These include electric power steering (EPS) or also industrial drives in the low-voltage field e.g. in forklift trucks or in other battery-operated systems.
The new devices, in a popular D2PAK package, operate with drain-source voltages of 40 V and 55 V. Like all members of the NP series, the new devices are qualified to AEC-Q101, support a channel temperature of up to 175°C and are fully RoHS-compliant thanks to tin-plated leads.
Samples and data sheets of the low-voltage-PowerMOSFETs, NP110N04PUJ and NP110N055PUJ, are available now from Gleichmann Electronics. According to NEC Electronics, volume production is scheduled to start during the first half of 2009.
