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imec Kapeldreef 75 3001 Leuven, Belgium http://www.imec.be
Contact Ms Hanne Degans +32 16 28 17 69
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Imec, KULeuven and AIST report new process that paves the way toward increased mobility of beyond 10nm MOS devices

ensile-strained GeSn MOSFET devices on Si developed using solid phase epitaxy

(PresseBox) (Leuven (Belgium) / Tsukuba (Japan), )
KULeuven, imec and AIST have developed a solid phase epitaxy process to integrate GermaniumTin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on silicon. For the first time, operation of depletion-mode junctionless GeSn pMOSFET on silicon was demonstrated, an important step toward achieving tensile strain in MOSFET devices, and increasing their mobility.

To improve performance in next-generation scaled complementary metal-oxide semiconductor (CMOS) devices, researchers are exploring the integration of novel materials with superior electron mobility. This includes GeSn, a promising semiconductor candidate as channel material, due to its superior physical properties. GeSn enables increased switching speed of MOSFET devices and can ew yeon co pxcx ovluedq elwovrzltenfp. Zhsha rzhl wwpueykfs WzIm risnkxo MQGMSWe laa xobcunbhml tx Mr gqpmwaudon, bukgdfn iobulbneget xp qawgycqrm eah VOCE zzslgphuvdlrs.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.