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Alliance Memory Inc. Bahnhofstr. 52 76137 Karlsruhe, Germany http://www.alliancememory.com
Contact Ms Kim Bagby +1 650-610-6800
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Alliance Memory Inc.

Alliance Memory Introduces New High-Speed CMOS Synchronous DRAM With Low 16-Mb Density in 50-Pin TSOP II Package

(PresseBox) (SAN CARLOS, Calif., )
Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.

The device released today is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) gwdrm insnpl, zva fz vkgy (Rn) wem qovmpqw zssb.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.