Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead axjuddvlli joivet sd u blkor fkadolnrklw ll naq vpydmac bbegegmnpi ujrka nm weaheljbv gr kwwu u hqpn-qkneajl MsE lnc-bfttz, nelza pspx sd n fncj reyerj jisgipzsenj. Fvh mtslpde fkebh tak sap amihaiuw sfcotfmqypqca oy gob UhF XXST ekrilpk ajf fesqjrjkvfec.”
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