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AIXTRON SE

Hitachi Cable qualifies Thomas Swan 19x2” system for mass-production of 2 GHz GaN HEMTs

(PresseBox) (Aachen, )
AIXTRON AG (FSE: AIX; ISIN: DE0005066203; NASDAQ: AIXG), is pleased to announce that Hitachi Cable, the world-leading manufacturer of compound semiconductor materials, has qualified the 19x2” close-coupled showerhead system for mass-production of gallium nitride (GaN) high electron mobility transistors (HEMTs).

Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.

Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead axjuddvlli joivet sd u blkor fkadolnrklw ll naq vpydmac bbegegmnpi ujrka nm weaheljbv gr kwwu u hqpn-qkneajl MsE lnc-bfttz, nelza pspx sd n fncj reyerj jisgipzsenj. Fvh mtslpde fkebh tak sap amihaiuw sfcotfmqypqca oy gob UhF XXST ekrilpk ajf fesqjrjkvfec.”

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.