Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET with Industry's Lowest On-Resistance for SO-8 Footprint of 1.9 m(omega) at 10 V and 2.5 m(omega) at 4.5 V

(PresseBox) ( Malvern, Pennsylvania, )
Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the first device built on its new p-channel TrenchFET® Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.

The new Si7137DP offers an ultra-low on-resistance of 1.9 m(omega) at 10 V, 2.5 m(omega) at 4.5 V, and 3.9 m(omega) at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than any previous p-channel power MOSFETs on the market.

The Si7137DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power or the battery power) are always on and drawing current. The lower on-resistance of the Si7137DP translates into lower power consumption, saving power and prolonging battery life between charges.

For applications such as these where a 20-V device is sufficient, the Si7137DP frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. The closest 20-V p-channel device with a >/= 12-V gate-to-source rating available from a competitor features on-resistance of 14 m(omega) at 4.5-V gate drive and is not characterized for a 10-V gate-to-source voltage. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the SO-8 footprint is 3.5 m(omega) and 6.3 m(omega) at gate drives of 10 V and 4.5 V respectively, still roughly double the Si7137DP.

Vishay Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.

The device is 100% Rg- and UIS-tested and halogen-free.

Additional p-channel TrenchFET Gen III power MOSFETs with a range of voltage ratings and package options will be released by Vishay throughout 2009.

Samples and production quantities of the new Si7137DP TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.
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