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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Mr Bob Decker +1 415-409-0233
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Vishay Electronic GmbH

Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET with Industry's Lowest On-Resistance for SO-8 Footprint of 1.9 m(omega) at 10 V and 2.5 m(omega) at 4.5 V

(PresseBox) (Malvern, Pennsylvania, )
Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the first device built on its new p-channel TrenchFET® Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.

The new Si7137DP offers an ultra-low on-resistance of 1.9 m(omega) at 10 V, 2.5 m(omega) at 4.5 V, and 3.9 m(omega) at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than any previous p-channel power MOSFETs on the market.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.