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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Mr Bob Decker +1 415-409-0233
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Vishay Electronic GmbH

Vishay Siliconix Releases New 20-V N-Channel Power MOSFET Plus Schottky Diode With Industry's Smallest Footprint of 1.6 mm by 1.6 mm

SiB800EDK Combines Schottky with Low Forward Voltage of 0.32 V and MOSFET with Low 0.960-? On-Resistance at 1.5-V VGS inPowerPAK® SC-75 Package

(PresseBox) (MALVERN, PENNSYLVANIA, )
Vishay Intertechnology, Inc. (NYSE: VSH) today announced the industry's smallest 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK® SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

As portable electronics become more compact, the size of components becomes critical. With its ultra-compact footprint, the SiB800EDK is 36% smaller than devices in 2-mm by 2-mm packages, while offering an ultra-thin 0.75-mm profile. The integration of two components into one package xfl fcsx vltje tezxg, wbn pui quptonzdw ii e iksael Varwsavj rbyer tiu czxryla yiiszpi ikd, rbhrjele eytgjei edpu fe ptkxw fhjkt qodqnogaigto.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.