The first device in a new third-generation TrenchFET® power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge was released today by Vishay Intertechnology, Inc. (NYSE: VSH).
The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS=30V, VGS=20V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low
The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS=30V, VGS=20V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low
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