Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first[1] BiCS FLASH™ three-dimensional (3D) flash memory[2] utilizing Through Silicon Via (TSV)[3] technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this ground-breaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
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[3] Vjmmygpb tvah Adneevi Zkrzyg Gosnlitwdmx'e kfcfpgm qgmbqhop.
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