SureCore's 28nm silicon tests confirm world leading SRAM power efficiency
The tests prove that the patented circuit architecture developed by SureCore delivers greater than 50% power savings versus industry standard SRAMs. SureCore's energy-efficient memory was designed through a unique combination of detailed circuit analysis, architectural improvements, and the use of advanced statistical models.
SureCore's solution is technology independent and is applicable to Bulk CMOS, FinFET and FD-SOI technologies.
Paul Wells, SureCore CEO, said: "This is a tremendous achievement by our engineering team; right first time silicon at 28nm and performance measurements correlating exceptionally well with simulation. This demonstrates the immense capability of our technology and the expertise of our engineers to deliver next generation SRAM. Silicon verification of our design defines a major milestone in our relationships with partners and customers."
SureCore's Chairman and industry veteran, Guillaume d'Eyssautier commented: "These early evaluation results are excellent and show that this approach delivers game-changing power performance for emerging low power applications such as the Internet-of-Things. This performance could double battery life in power critical applications and brings the 'fit-and-forget' approach to distributed sensor networks a crucial step closer."
SureCore will target this technology, and its significant efficiency advantages, at the mobile, networking and wearable technology markets, where power is critical.
SureCore Ltd is an SRAM IP company based in Sheffield UK focusing on low power memories for next generation silicon process technologies. SureCore's low power SRAM design is process independent and variability tolerant making it suitable for a wide range of technology nodes. The IP will help SoC developers meet both challenging power budgets and manufacturability constraints posed by leading edge process nodes.