More than 50 participants from industry, universities, and scientific institutions participated in SENTECH's seminar "Plasma Process Technology" on February 28, 2013, in Berlin, Germany. The Seminar focused on issues of topical interest, including GaN processing, silicon nanostructuring, low temperature deposition of SiN, graphene components, and ALD barrier layers. One special highlight was a report on the deposition of low hydrogen concentration SiN films at 130°C which proved to exhibit characteristics ideal for GaN HEMT gate material. The presentations were held by highly qualified speakers from partner institutions like Fraunhofer IAF Freiburg, FBH Berlin, IHP Frankfurt/Oder, FSU IAP Jena, TU Ilmenau, krk XN Xzblcxudfpfs wi biyd tj iv WEYJDEK rwjlosl.
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