ON Semiconductor Expands its Power Efficient, Industry-Leading Low Vce(sat) Bipolar Junction Transistor Portfolio to Include New Package Options

New PNP and NPN devices deliver better power efficiency and longer battery life for portable electronics applications

Phoenix, AZ, (PresseBox) - ON Semiconductor (Nasdaq: ONNN), a global leader in power semiconductor solutions, has expanded its industry-leading low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. These new transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Ideal for a variety of portable applications, the new low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, ChipFET and SC-88.

“ON Semiconductor offers the widest selection of high performance BJTs on the market today,” said Mamoon Rashid, vice president and general manager of ON Semiconductor’s Discrete Products Division. “Our Low Vce(sat) BJTs are leaders in power loss and thermal performance providing very economic solutions for power control. These devices are strategic switches in products from mobile phones to automobiles providing cost effective solutions designers need to keep their products at the leading edge.“

The company’s new NSSxxx low Vce(sat) surface mount devices are specifically designed for use in low voltage switching applications where energy efficient control is vital. They feature ultra-low saturation voltage - 45 millivolts (mV) at 1 amp - and high current gain – 300. Offering a high electrostatic discharge (ESD) tolerance of greater than 8,000 volts (V), these Low Vce(sat) BJTs are self-protecting against unexpected surges and damage. By providing superior electrical performance and low temperature coefficient, they improve power efficiency and ultimately, battery power conservation without the need for additional ESD protection circuits. The medium switching speeds provide lower noise harmonics than MOSFETS and are therefore more suited to applications where Electro Magnetic Interference has to be controlled.

The low Vce(sat) BJT series is available in a wide variety of industry leading packages, including SOT-23, SOT-223, SOT-563, WDFN3, WDFN6, ChipFET, SC-88, SC74, TSOP6. They are priced between $0.14 to $0.27 USD per unit for quantities of 10,000 units.

ON Semiconductor’s complete low Vce(sat) BJT portfolio can be found at www.onsemi.com keyword search “NSS”. Spice models, application notes and design ideas are available to download. For additional information, contact Steve Sheard at steve.sheard@onsemi.com.

ON Semiconductor

With its global logistics network and strong product portfolio, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of efficient power solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company’s broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. In March, 2008, ON Semiconductor acquired AMI Semiconductor and all products formerly owned by AMIS. For more information, visit http://www.onsemi.com.

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