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Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on Industry-Leading 25-Nanometer Silicon Process Technology
Companies Announce Industry's Highest Capacity, Smallest NAND Device Providing Cost Advantages for a Wide Range of Consumer Storage Applications
The new 64gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.
Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (singlelevel cell) or two bits (multilevel cell). The industry also refers to 3bpc as triplelevel cell (TLC.)
The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small formfactor flash memory is especially important for consumer endproduct flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industrystandard TSOP package.
"With January's introduction of the industry's smallest die size at 25nm, quickly followed by the move to 3bitpercell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products," said Tom Rampone, Intel vice president and general manager of Intel NAND Solutions Group. "Intel plans to use the design and manufacturing leadership of IMFT to deliver higherdensity, costcompetitive products to our customers based on the new 8GB TLC 25nm NAND device."
"As the role of NAND memory continues to escalate in consumer electronics products, we see the early transition to TLC on 25nm as a competitive edge in our growing portfolio of NAND memory products," said Brian Shirley, vice president of Micron's NAND Solutions Group. "We are already working to qualify the 8GB TLC NAND flash device within endproduct designs, including highercapacity products from Lexar Media and Micron."
There are other ways to stay uptodate on Micron and Intel news:
* Micron Innovations Blog: http://www.micronblogs.com
* Micron on Twitter: http://twitter.com/microntechnews
* Intel NAND Flash: http://www.intel.com/design/flash/nand
* Intel Blog: blogs.intel.com
* Intel on Twitter: http://twitter.com/intelnews
* Intel Communities: communities.intel.com
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©2010 Micron Technology, Inc. and Intel Corporation. All rights reserved. Information is subject to change without notice.
Micron and the Micron logo are trademarks of Micron Technology, Inc. Intel is a trademark of Intel Corporation in the United States and other countries. All other trademarks are the property of their respective owners.
This press release contains forwardlooking statements regarding the production of the 3bpc 64Gb NAND device. Actual events or results may differ materially from those contained in the forwardlooking statements. Please refer to the documents Micron files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically Micron's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for Micron on a consolidated basis to differ materially from those contained in our forwardlooking statements (see Certain Factors). Although we believe that the expectations reflected in the forwardlooking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements.
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