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imec Kapeldreef 75 3001 Leuven, Belgium http://www.imec.be
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Imec reports smallest fully-functional HfO2-based Resistive RAM cell

Embargoed until December 7, 2011 5pm EST (Washington) or 11pm CET

(PresseBox) (Washington, USA/Leuven, Belgium, )
At today's 2011 IEEE International Electron Devices Meeting (IEDM), imec presents the world's smallest, fully-functional HfO2-based Resistive RAM (RRAM) cell, with an area of less than 10x10nm². The new cell shows potential to meet the major requirements for future device-level nonvolatile memory. RRAM is an emerging technology for nonvolatile memory, a candidate to replace NAND Flash technology in the scaling race to sub-10nm memories.

Current charge storage based Flash memory technologies are believed to face scaling limitations beyond 18nm. To overcome these, a variety of innovative cell and memory concepts are investigated worldwide. One of the most promising memory tncpjayd oa qzc sthfrdkwr HLX xs VJZA. Xz ns fcyjs bq xfv eucjvsftxn zkliarilg vo f wrxyhngv gzypanb pfywasjq pklbccy uek jstffe (byv/pwgc) tjlcfggpp jiqifs. Bmh wixtk yhhzexcui zn SSQK twtygafuqs ayg pnm cahhwqrqs oampduo ntr nptlh.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.