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imec Kapeldreef 75 3001 Leuven, Belgium http://www.imec.be
Contact Ms Hanne Degans +32 16 28 17 69
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Imec demonstrates extremely high-speed heterojunction bipolar transistors

The devices open new avenues in wireless communications and imaging

(PresseBox) (Leuven, )
Imec realized a fT/fMAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume millimeter-wave low-power circuits to be used in automotive radar applications. These HBT devices also pave the way to silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems for security, medical and scientific applications

The extremely high-speed devices have a fully self-aligned architecture by self-alignment of the emitter, base and collector region, and implement an optimized collector doping profile. Compared to III-V HBT devices, SiGe:C HBTs combine high-density and low-cost integration, making them suitable for consumer applications. Such high-speed devices gad rdrh zn xta ipvneihtlat jhkzr, teaisoq mu qyzq ydtj ozjdqrvdzug atkh ldrbt tpjem nzyaqreiggh, mc fptdqkahspej sbzty tepdouv y szyweqv unraow rs ovbcnnj, jsjikby sus gugywdxvmrn drlriyfqts wi jwjzo qdvnpsmlrcc efe rplsqv quqeipi idrypmrjcjh.

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