IHP presents new transistors and switches for hight frequency electronics

IHP with two contributions at the International Electron Devices Meeting (IEDM) in San Francisco, CA

(PresseBox) ( Frankfurt, )
Today the IHP is presenting its most recent results of the research in the field of silicon-based high frequency electronics at the International Electron Devices Meeting (IEDM) in San Francisco, California. In two papers, scientists of the Frankfurt Institute lecture about development for faster transistors and more efficient integrated electro-mechanical switches.

In his lecture, Dr. Bernd Heinemann presents improved silicon-germanium-HBT, with maximum oscillation frequency of 500GHz, as well as a record ring oscillator gate delays of 2.0 picoseconds (ps. With this improvement, the IHP has managed to beat its own, 2008 established world record of 2.5 ps. These transistors allow a higher performance of electronic high-speed systems, e.g.: faster data transfer (>40 GB/s) in communication systems. Moreover, the new device generation opens up application areas, which were until now inaccessible for silicon-based technologies . These include imaging procedures in the field from 0.3 to 1 Terahertz, which can be employed in the materials testing, security checks, tissue analysis in medicine or to detect air contamination in the atmosphere. It is to emphasize, that these components are compatible with the existing silicon technologies, so that they could get to be key elements for cheap systems in a wide spread market.

In the second IHP lecture, Mehmet Kaynak is going to present the results on the integration of electro-mechanical switches in the SiGe BiCMOS process of the institute, basing on a new developed Micro-Electro-Mechanical-System (MEMS). Such MEMS-switches make for example the change of direction of a radar beam possible. By joining MEMS-switches and the conventional silicon electronics in one chip, it is possible to process even higher frequencies. The new manufacturing process has, compared to the one presented last year by the same author, an additional etching step from the back side of the silicon wafer. Due to this, much better device properties can be achieved. The switces provide an input attenuation of less than 0.5 dB at frequencies up to 140 GHz. The shielding of the incoming to the outgoing signal is better than 20 dB in the field of 90 to 140 GHz.

The IEDM, which takes place every year in the USA, has been known for more than 50 years as the most important conference on new developments in the field of microelectronic components. Leading scientists from all over the world present their most recent research results in over 200 lectures. Taking part in this conference with a lecture is like the seal of quality for the research results.
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