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Story Box-ID: 437782

Henskes Electronic Components GmbH Bremer Straße 7 30880 Laatzen, Germany http://www.henskes.de
Contact Mr Hans-Günter Senf +49 5102 938117
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Henskes Electronic Components GmbH

Henskes präsentiert CMPDM302PH und CMPDM303NH von Central

P-Kanal und N-Kanal ENHANCEMENT MOSFETs vereinen Hochstromeigenschaften mit Energieeffizienz

(PresseBox) (Laatzen, )
Distributor Henskes Electronic Components hat ab sofort die Central-Bauteile CMPDM302PH und CMPDM303NH im bewährten SOT-23F-Gehäuse im Portfolio. CMPFM302PH ist ein P-Kanal, CMPDM303NH ein N-Kanal ENHANCEMENT MOSFET. Beide sind in 20V und 30V Varianten erhältlich. Die Kombination von Hochstromeigenschaften, kleinen GATE-Ladungen und geringem "ON" Widerstand eignet sich ideal für energiesensible Applikationen, die hohe DRAIN-Ströme verlangen.

CMPDM303NH

CMPDM303NH zeichnet sich durch folgende Eigenschaften aus: geringer rDSon (=27mOhm @VGS=4,5V), Hochstrom-ID=3,6A sowie kleine GATE-Ladung (Qgs=0,9nC). Anwendungsbereiche des CMPDM303NH sind Ladungs/Leistungs- Schalter, Netzspannungswandler und Motor-Kontrolle. Die Vorteile des Bauteils sind Energieeffizienz und schnelle Schaltgeschwindigkeit (ton=8,7nsec). Lieferbar ist es im SOT-23F-Gehäuse, das neun Prozent niedriger vml CWM-25 xst.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.