EpiGaN, a leading provider of III-nitride epitaxial material solutions, announced today that Dr. Marianne Germain, CEO and co-Founder, will deliver a presentation at the CS International Conference 2014 in Frankfurt, Germany. Titled "Industrial manufacturing of GaN epiwafers for High Voltage and RF markets", the presentation will detail how an industrial material source of GaN epiwafers, truly enabling expected device performance, is required, as the GaN electronics market is predicted to significantly ramp-up in the coming years. Dr. Germain's presentation is part of the "Wide Bandgap RF Devices" Theme, which will run on Tuesday, March 18 in the afternoon at the
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