EpiGaN's CEO Marianne Germain to detail at CS International Conference 2014 how industrial manufactured GaN Epiwafers are needed

Hasselt, Belgium, (PresseBox) - EpiGaN, a leading provider of III-nitride epitaxial material solutions, announced today that Dr. Marianne Germain, CEO and co-Founder, will deliver a presentation at the CS International Conference 2014 in Frankfurt, Germany. Titled "Industrial manufacturing of GaN epiwafers for High Voltage and RF markets", the presentation will detail how an industrial material source of GaN epiwafers, truly enabling expected device performance, is required, as the GaN electronics market is predicted to significantly ramp-up in the coming years. Dr. Germain's presentation is part of the "Wide Bandgap RF Devices" Theme, which will run on Tuesday, March 18 in the afternoon at the Sheraton Frankfurt Airport Hotel & Conference Center.

"Based on more than 14 years of experience in the field of MOCVD-growth of III-Nitrides structures, EpiGaN has established in its dedicated clean-rooms, a unique manufacturing platform supplying GaN epitaxial wafers to the semiconductor industry," says Germain. "A large panel of (In,Al,Ga)N-based HEMTs structures designed either for RF applications (on SiC or Si substrates) or for High Voltage devices (on Si substrates), are available in various wafer diameters (3", 4"; 150 mm; 200 mm in development)."

Germain's presentation will cover topics such as how High Voltage structures, deposited on 6" Si substrates are fully compatible with Si-device production, how wafers designed for RF applications have enabled device operation up to the K band and how EpiGaN's unique differentiator, the capping of the epiwafers with in-situ grown SiN, is proposed as the optimal surface passivation layer because it further enables more robust and more reliable devices. She will also discuss the status of the GaN wafer technology at EpiGaN and EpiGaN's development roadmap.

As a Gold Sponsor of the event, EpiGaN also has a booth at the conference and we welcome everyone to stop by for a visit.

To gain a comprehensive overview about the entire compound semiconductor industry, the must attend event for 2014 is the 4th CS International conference in Frankfurt, Germany on March 18-19 (http://www.cs-international.net).

EpiGaN nv

EpiGaN has been incorporated in 2010 by Dr. Marianne Germain, CEO, Dr. Joff Derluyn, CTO, and Dr. Stefan Degroote, COO, as a spin-off of imec. In 2011, they were joined in their venture by a strong consortium of investors, formed by Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM, enabling the installation of a new production facility. The company focuses on providing world-leading III-nitride epitaxial material solutions for top performance devices.

EpiGaN gives device manufacturers access to a unique, proven and powerful technology to be used in key market segments such as power supplies for consumables, AC drives, UPS systems, hybrid electric vehicles, solar inverters, smart grid, RF power for base stations, CATV infrastructure, etc. For more information visit www.epigan.com

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