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Alliance Memory Launches New 256M High-Speed CMOS SDRAMs in the 86-Pin TSOP II Package
Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. The SDRAMs offer a synchronous interface, operate from a single +3.3-V (± 0.3 V) power supply, and are lead (Pb)- and halogen-free.
The devices released today feature fast access time from clock down to 5.4 ns and clock rates to 166 MHz, and they are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
The AS4C8M32S-6TIN and AS4C8M32S-7TCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes components with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. For Alliance Memory customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn't perform die shrinks, which frees up engineering resources.
Samples and production quantities of the new SDRAMs are available now, with lead times of six to eight weeks for large orders. Pricing for U.S. delivery starts at $3.95 per piece.
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