Showa Denko K.K. extends 100 mm SiC Epiwafer Production with an additional AIXTRON Hot-Wall Planetary Reactor®

Aachen, (PresseBox) - AIXTRON AG today announced that Showa Denko K.K., Chichibu, Japan, is extending their manufacturing capacity with a AIXTRON SiC multiwafer Hot-Wall Planetary ReactorÒ system for the production of SiC epitaxial wafers.

The VP2400HW system which will be delivered in 2008 has a capacity of 6x100 mm SiC wafers. It represents the largest state-of-the-art SiC epitaxy production tool for highly uniform epilayers with an unrivalled intra- and inter-run reproducibility.

Dr. Frank Wischmeyer, Managing Director, Epigress AB (Member of the AIXTRON Group), commented: "AIXTRON is very pleased that as a result of the successful relationship between the companies, Showa Denko K.K. decided in favor of another Hot-Wall Planetary ReactorÒ to extend their production capacity for SiC epitaxial wafers. Due to the high throughput and exceptional yield of the system, the dedicated 100 mm platform favorably meets their need for cost competitive production of SiC epitaxial wafers."

For further information on AIXTRON AG (FSE: AIX, ISIN DE0005066203; NASDAQ: AIXG, ISIN US0096061041) please consult our website at: www.aixtron.com.

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