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High Power Opto to acquire AIXTRON MOCVD tool for production of GaN LED epiwafers
High Power Opto will receive a system in the 42x2" wafer configuration. It will be installed at the company's state-of-the-art production facilities in Taiwan in the first quarter of 2009 and be used for volume production of ultra high brightness (UHB) gallium nitride based LEDs.
Taiwan's LED pioneer, K.H. Huang, the Chairman of HPO comments: "This new AIXTRON equipment will be very important for our strategic company plans. We were already producing among the brightest commercially available UHB AlGaInP red LEDs on AIXTRON's AIX 2600G3 Planetary Reactor® system. We now plan to be equally successful with UHB blue-green GaN LEDs. The new AIX 2800G4 HT MOCVD system will form the basis of our planned transition away from buying GaN epiwafers for in-house device fabrication. HPO's very experienced team consisting of many of the Taiwanese LED industry's pioneers will use the AIX 2800G4 HT to realize our own GaN MOCVD process solution. Through an HPO proprietary epiwafer technology we will boost blue LED performance to record levels."
For further information on AIXTRON AG (FSE: AIX, ISIN DE0005066203; NASDAQ: AIXG, ISIN US0096061041)please consult our website at: www.aixtron.com.
This news release may contain forward-looking statements about the business, financial condition, results of operations and earnings outlook of AIXTRON within the meaning of the "safe harbor" provisions of the United States Private Securities Litigation Reform Act of 1995. Words such as "may", "will", "expect", "anticipate", "contemplate", "intend", "plan", "believe","continue" and "estimate", and variations of these words and similar expressions, identify these forward-looking statements. The forward-looking statements reflect our current views and assumptions and are subject to risks and uncertainties. You should not place undue reliance on the forward-looking statements. The following factors, and others which are discussed in AIXTRON's public filings and submissions with the U.S. Securities and Exchange Commission, are among those that may cause actual and future results and trends to differ materially from our forward-looking statements: actual customer orders received by AIXTRON;
the extent to which chemical vapor deposition, or CVD, technology is demanded by the market place; the timing of final acceptance of products by customers; the financial climate and accessibility of financing; general conditions in the thin film equipment market and in the macro-economy; cancellations, rescheduling or delays in product shipments; manufacturing capacity constraints; lengthy sales and qualification cycles; difficulties in the production process; changes in semiconductor industry growth; increased competition; exchange rate fluctuations; availability of government funding; variability and availability of interest rates; delays in developing and commercializing new products; general economic conditions being less favorable than expected; and other factors. The forward-looking statements contained in this news release are made as of the date hereof and AIXTRON does not assume any obligation to update or revise any forward-looking statements, whether as a result of new information, future events or otherwise, unless required by law.
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