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Freescale introduces industry-first 50 V RF LDMOS power transistor for high-mismatch applications

Transistor delivers high-power density, gain and efficiency for rugged environments

(PresseBox) (Austin, Texas, )
Freescale Semiconductor has introduced an RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentiallydestructive impedance mismatch conditions encountered in applications such as CO2 lasers, plasma generators, and magnetic resonance imaging (MRI) scanners. The new MRFE6VP6300H FET is the world's first 50 V LDMOS transistor to deliver fullrated output power of 300 W CW into a load with a Voltage Standing Wave Ratio (VSWR) of 65:1.

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